Yu‐Lun Chueh
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View article: Hot Electron‐Assisted Noble‐Metal‐Free Synergistic Photothermal Catalyst for Solar‐Driven Wastewater Remediation and Microbial Disinfection
Hot Electron‐Assisted Noble‐Metal‐Free Synergistic Photothermal Catalyst for Solar‐Driven Wastewater Remediation and Microbial Disinfection Open
The escalating challenge of water contamination by recalcitrant organic pollutants and pathogens calls for sustainable, solar‐powered technologies that operate without external energy or chemical inputs. Such systems require multifunctiona…
View article: Nickel-Assisted Laser Oxidation of WSe <sub>2</sub> Layered Films for Spatially Controlled WO <sub>3</sub> Patterning Process toward Resistive Memory and Molecular Sensing
Nickel-Assisted Laser Oxidation of WSe <sub>2</sub> Layered Films for Spatially Controlled WO <sub>3</sub> Patterning Process toward Resistive Memory and Molecular Sensing Open
A novel approach to convert a 2D WSe2 film into a WOx film by the laser-induced oxidation process using a nickel (Ni) adsorption layer, namely Ni-assisted laser oxidation process, was demonstrated. A layer of N…
View article: Bi <sub>2</sub> O <sub>2</sub> Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance
Bi <sub>2</sub> O <sub>2</sub> Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance Open
The continuous scaling of conventional floating-gate memories faces major challenges due to charge leakage and complex multilayer architectures. Here, we report a monolithic nonvolatile memory (NVM) device constructed using a single 2D mat…
View article: Direct Formation of Stable 1T′ Molybdenum Telluride (MoTe <sub>2</sub> ) by Laser Annealing Processes as Robust Contacts for High-Performance Molybdenum Disulfide (MoS <sub>2</sub> ) Field Effect Transistors
Direct Formation of Stable 1T′ Molybdenum Telluride (MoTe <sub>2</sub> ) by Laser Annealing Processes as Robust Contacts for High-Performance Molybdenum Disulfide (MoS <sub>2</sub> ) Field Effect Transistors Open
Semimetals, with their low density of states near the Fermi level, effectively suppress metal-induced gap states, enabling near-zero Schottky barrier heights in two-dimensional (2D) field-effect transistors (FETs). However, the low melting…
View article: Monodisperse High-Entropy Metal Oxide Nanoparticles Encapsulated within 2D Porous Carbon Sheets for Enhanced Catalytic Activity in Lithium-Sulfur Batteries
Monodisperse High-Entropy Metal Oxide Nanoparticles Encapsulated within 2D Porous Carbon Sheets for Enhanced Catalytic Activity in Lithium-Sulfur Batteries Open
View article: Revealing Robust Room Temperature Ferromagnetism in Gd‐Doped Few‐Layered MoS <sub>2</sub> Thin Films
Revealing Robust Room Temperature Ferromagnetism in Gd‐Doped Few‐Layered MoS <sub>2</sub> Thin Films Open
2D MoS 2 holds great promise for spintronics, yet is limited by intrinsic diamagnetism. This study demonstrates inducing ferromagnetic behavior in MoS 2 films doped with 0.47% Gd, achieving an ultrahigh saturation magnetization of 454 emu/…
View article: Synthesis‐Related Nanoscale Defects in Mo‐Based Janus Monolayers Revealed by Cross‐Correlated AFM and TERS Imaging
Synthesis‐Related Nanoscale Defects in Mo‐Based Janus Monolayers Revealed by Cross‐Correlated AFM and TERS Imaging Open
2D Janus transition metal dichalcogenides (TMDs) are promising candidates for various applications including non‐linear optics, energy harvesting, and catalysis. These materials are usually synthesized via chemical conversion of pristine T…
View article: Integration of freestanding hafnium zirconium oxide membranes into two-dimensional transistors as a high-κ ferroelectric dielectric
Integration of freestanding hafnium zirconium oxide membranes into two-dimensional transistors as a high-κ ferroelectric dielectric Open
View article: Controllable CVD Growth of Monolayered WS<sub>2</sub> From Triangular Flakes toward Wafer‐Scale Thin Film by Precise Design of Growth Environment
Controllable CVD Growth of Monolayered WS<sub>2</sub> From Triangular Flakes toward Wafer‐Scale Thin Film by Precise Design of Growth Environment Open
Here, a large‐area monolayered WS 2 thin film is synthesized via near atmospheric pressure chemical vapor deposition, and the effects of different parameter adjustments on the growth of the monolayered WS 2 thin films are discussed. Unlike…
View article: Mechanically Tunable Néel Temperature in a 3D Nickel Oxide-Intercalated Muscovite Mesocrystal
Mechanically Tunable Néel Temperature in a 3D Nickel Oxide-Intercalated Muscovite Mesocrystal Open
Exploring the physical properties of functional materials in response to reduced-dimensional environments has attracted significant attention. In this study, we focus on the feature of van der Waals gaps in 2D layered silicate mica for int…
View article: Semiconductor Performance Optimization on Quasi-Two-Dimensional Bi<sub>2</sub>O<sub>2</sub>(S<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub>) through Monotonous Alloying
Semiconductor Performance Optimization on Quasi-Two-Dimensional Bi<sub>2</sub>O<sub>2</sub>(S<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub>) through Monotonous Alloying Open
Bismuth oxychalcogenides (Bi2O2X, where X = S, Se, Te) have garnered significant attention recently due to their high electron mobility, air stability, and excellent photoelectric properties. Therefore, precise contro…
View article: Ultrathin Bi<sub>2</sub>O<sub><b>2</b></sub>Se/Si Heterojunction Photodetector with Tunneling Oxide Passivation for Enhanced Optoelectronic Performance
Ultrathin Bi<sub>2</sub>O<sub><b>2</b></sub>Se/Si Heterojunction Photodetector with Tunneling Oxide Passivation for Enhanced Optoelectronic Performance Open
Two-dimensional (2D) materials have garnered significant attention for next-generation optoelectronic devices due to their exceptional physical properties. This study introduces a high-performance ultrathin Bi2O2Se/Si…
View article: Printable Two-Dimensional Nanomaterials: Approaching Low-Cost Electrodes for High-Efficiency Li/Na-Ion Batteries and Photodetectors
Printable Two-Dimensional Nanomaterials: Approaching Low-Cost Electrodes for High-Efficiency Li/Na-Ion Batteries and Photodetectors Open
View article: Improved Metal–Semiconductor Interface in Monolayer (1L)-MoS<sub>2</sub> via Thermally-Driven Ag Filaments as Atomic Scale Edge Contacts Triggered by Selective Annealing Process Using Long Wavelength (1064 nm) Pulsed Laser
Improved Metal–Semiconductor Interface in Monolayer (1L)-MoS<sub>2</sub> via Thermally-Driven Ag Filaments as Atomic Scale Edge Contacts Triggered by Selective Annealing Process Using Long Wavelength (1064 nm) Pulsed Laser Open
Here, we explore the effectiveness of a pulsed laser annealing (PLA) process to trigger atomic scale edge contacts by Ag filaments in reducing the contact resistance of a MoS2 field-effect transistor (FET). Employing a long wave…
View article: Synthesis-related nanoscale defects in Mo-based Janus monolayers revealed by cross-correlated AFM and TERS imaging
Synthesis-related nanoscale defects in Mo-based Janus monolayers revealed by cross-correlated AFM and TERS imaging Open
Two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) are promising candidates for various applications in non-linear optics, energy harvesting, and catalysis. These materials are usually synthesized via chemical conversion of…
View article: Epitaxial Antiferroelectric Bi<sub>2</sub>O<sub>2</sub>S Films with Superior Photoresponse
Epitaxial Antiferroelectric Bi<sub>2</sub>O<sub>2</sub>S Films with Superior Photoresponse Open
Two-dimensional bismuth oxychalcogenide is a rising material system with superior electronic properties. However, a lack of high-quality synthesis impedes the exploration of fundamental understanding and practical applications. This work p…
View article: Polarity modulation in compositionally tunable Bi2O2Se thin films
Polarity modulation in compositionally tunable Bi2O2Se thin films Open
View article: Highly Stable S<sup>2−</sup>‐Doped‐rGO@Fe<sub>2.57</sub>Mn<sub>0.43</sub>O<sub>4</sub>@C Hybrid Heterostructures by Sulfur‐ Doping of Graphene‐Coated 3D Fe<sub>2.57</sub>Mn<sub>0.43</sub>O<sub>4</sub> Nanorods on rGO Nanosheets for High‐Performance Fast Charge/Discharge Ni/Fe Batteries
Highly Stable S<sup>2−</sup>‐Doped‐rGO@Fe<sub>2.57</sub>Mn<sub>0.43</sub>O<sub>4</sub>@C Hybrid Heterostructures by Sulfur‐ Doping of Graphene‐Coated 3D Fe<sub>2.57</sub>Mn<sub>0.43</sub>O<sub>4</sub> Nanorods on rGO Nanosheets for High‐Performance Fast Charge/Discharge Ni/Fe Batteries Open
Multicomponent transition metal heterostructures is constructed through a heteroatomic doping method sandwiched by the dual carbon layers. The promising strategy combines iron and manganese ions into a novel Fe 2.57 Mn 0.43 O 4 heterostruc…
View article: Design of Electrolyte Using Deep Eutectic Solvents for High‐Performance Rechargeable Nickel‐Iodine Batteries
Design of Electrolyte Using Deep Eutectic Solvents for High‐Performance Rechargeable Nickel‐Iodine Batteries Open
Rechargeable nickel‐ion batteries (RNiBs) have attracted significant attention because of their high volumetric density, low cost, environmental friendliness, and easy recyclability. In this study, a rechargeable nickel‐iodine battery usin…
View article: Phase transition in two-dimensional monolayer (1L)-molybdenum disulfide induced by atomic S-basal plane gliding via synchrotron X-ray monochromatic beam radiation for superior electronic performance
Phase transition in two-dimensional monolayer (1L)-molybdenum disulfide induced by atomic S-basal plane gliding via synchrotron X-ray monochromatic beam radiation for superior electronic performance Open
View article: Low-temperature pressure-assisted liquid-metal printing for β-Ga2O3 thin-film transistors
Low-temperature pressure-assisted liquid-metal printing for β-Ga2O3 thin-film transistors Open
View article: Highly Stabe Core-Shell Heterostructures by Homologous Metal Sulfides for Supercapacitors
Highly Stabe Core-Shell Heterostructures by Homologous Metal Sulfides for Supercapacitors Open
View article: Stabilizing Pt-Fe Dual-Metal Single Atoms in Zifs: A Pathway to Form Heterogeneous Catalysts
Stabilizing Pt-Fe Dual-Metal Single Atoms in Zifs: A Pathway to Form Heterogeneous Catalysts Open
View article: Effects of Extreme Ultraviolet Radiation on Transition Metal Dichalcogenides: Investigation of Physical and Electrical Properties
Effects of Extreme Ultraviolet Radiation on Transition Metal Dichalcogenides: Investigation of Physical and Electrical Properties Open
Transition metal dichalcogenides (TMDCs) have gained a lot of attention due to their versatile applications in electronic and sensing devices. Furthermore, TMDCs are the candidates to replace Si in the semiconductor industry. However, litt…
View article: Rational Design of Phase-Engineered WS<sub>2</sub>/WSe<sub>2</sub> Heterostructures by Low-Temperature Plasma-Assisted Sulfurization and Selenization toward Enhanced HER Performance
Rational Design of Phase-Engineered WS<sub>2</sub>/WSe<sub>2</sub> Heterostructures by Low-Temperature Plasma-Assisted Sulfurization and Selenization toward Enhanced HER Performance Open
Efficient hydrogen generation from water splitting underpins chemistry to realize hydrogen economy. The electrocatalytic activity can be effectively modified by two-dimensional (2D) heterostructures, which offer great flexibility. Furtherm…
View article: Transfer of 2D Films: From Imperfection to Perfection
Transfer of 2D Films: From Imperfection to Perfection Open
Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their …
View article: Temperature-dependent indirect gaps for two-dimensional bismuth oxychalcogenides probed by spectroscopic ellipsometry
Temperature-dependent indirect gaps for two-dimensional bismuth oxychalcogenides probed by spectroscopic ellipsometry Open
In-plane optical properties of two-dimensional bismuth oxychalcogenides Bi 2 O 2 X (X = S, Se, and Te) are reported for a wide spectral range of 0.73–6.42 eV and at temperatures of 4.5–500 K by spectroscopic ellipsometry. At room temperatu…
View article: Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors
Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors Open
Transistor miniaturization enables integrating billions on a chip but also introduces heat and mobility issues. Two-dimensional (2D) semiconductors, with their ultrathin nature, offer a promising solution to achieving superior gate control…
View article: Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping Layers
Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping Layers Open
The electronic properties of 2D materials are highly influenced by the molecular activity at their interfaces. A method was proposed to address this issue by employing passivation techniques using monolayer MoS2 field-effect tra…
View article: Figure-of-Merit in 2D Insulators Pertaining to the Thermokinetics of Hexagonal Boron Nitride via Atmospheric-Pressure Chemical Vapor Deposition (APCVD) on Cu: Origin and Scenario
Figure-of-Merit in 2D Insulators Pertaining to the Thermokinetics of Hexagonal Boron Nitride via Atmospheric-Pressure Chemical Vapor Deposition (APCVD) on Cu: Origin and Scenario Open
Although various synthesis methods have been explored to produce large-scale hexagonal boron nitride (hBN) single crystals, the thermokinetics of hBN growth by atmospheric pressure chemical vapor deposition (APCVD) with respect to the gas …