Ž. Gačević
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View article: A comprehensive diagram to grow InAlN alloys by plasma-assisted\n molecular beam epitaxy
A comprehensive diagram to grow InAlN alloys by plasma-assisted\n molecular beam epitaxy Open
Indium incorporation and surface morphology of InAlN layers grown on\n(0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a\nfunction of the impinging In flux and the substrate temperature in the\n450-610$^{\\circ}$C r…
View article: Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices Open
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation, expe…
View article: Structural and optical properties of self-assembled AlN nanowires grown on SiO <sub>2</sub> /Si substrates by molecular beam epitaxy
Structural and optical properties of self-assembled AlN nanowires grown on SiO <sub>2</sub> /Si substrates by molecular beam epitaxy Open
Self-assembled AlN nanowires (NWs) are grown by plasma-assisted molecular beam epitaxy (PAMBE) on SiO 2 /Si (111) substrates. Using a combination of in situ reflective high energy electron diffraction and ex situ x-ray diffraction (XRD), w…
View article: Theoretical maximum photogeneration efficiency and performance characterization of In<i>x</i>Ga1−<i>x</i>N/Si tandem water-splitting photoelectrodes
Theoretical maximum photogeneration efficiency and performance characterization of In<i>x</i>Ga1−<i>x</i>N/Si tandem water-splitting photoelectrodes Open
InxGa1−xN is a promising material for flexible and efficient water-splitting photoelectrodes since the bandgap is tunable by modifying the indium content. We investigate the potential of an InxGa1−xN/Si tandem used as a water-splitting pho…
View article: Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging
Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging Open
Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging.
View article: Effective Refractive-Index Approximation: A Link between Structural and Optical Disorder of Planar Resonant Optical Structures
Effective Refractive-Index Approximation: A Link between Structural and Optical Disorder of Planar Resonant Optical Structures Open
We provide detailed insights into a link between structural and optical\ndisorder of resonant optical structures, in particular, distributed Bragg\nreflectors (DBRs) and resonant microcavities. The standard (targeted) DBR\nstructures have …
View article: Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires Open
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited\nfor the fabrication of thin conformal intrawire InGaN nanoshells which host\nquantum dots in nonpolar, semipolar and polar crystal regions. All three\nquantum do…
View article: Analytical electron microscopy characterization of light‐emitting diodes based on ordered <scp>InGaN</scp> nanocolumns
Analytical electron microscopy characterization of light‐emitting diodes based on ordered <span>InGaN</span> nanocolumns Open
Self‐assembled nanocolumns (NCs) with InGaN/GaN disks constitute an alternative to conventional light emitting diodes (LED) planar devices [1]. However, their efficiency and reliability are hindered by a strong dispersion of electrical cha…
View article: Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells Open
This work reports on the benefits from using thin GaAsSb capping layers (CLs) on InAs/GaAs quantum dot (QD) solar cells. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment from type…
View article: Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires Open
This work reports an experimental and theoretical insight into phenomena of two-color emission and different electron-hole recombination dynamics in InGaN nanodisks, incorporated into pencil-like GaN nanowires. The studied nanodisks consis…
View article: Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS
Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS Open
We present a detailed examination of a multiple InxGa1−xN quantum well (QW) structure for optoelectronic applications.