Zoubir Khatir
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View article: Improved thermoreflectance imaging of trench IGBT via focus and illumination optimized reconstruction
Improved thermoreflectance imaging of trench IGBT via focus and illumination optimized reconstruction Open
View article: New temperature-independent aging indicator for power semiconductor devices – Application to IGBTs
New temperature-independent aging indicator for power semiconductor devices – Application to IGBTs Open
View article: A New Solution to the Grain Boundary Grooving Problem in Polycrystalline Thin Films When Evaporation and Diffusion Meet in Power Electronic Devices
A New Solution to the Grain Boundary Grooving Problem in Polycrystalline Thin Films When Evaporation and Diffusion Meet in Power Electronic Devices Open
This paper constituted an extension of two previous studies concerning the mathematical development of the grain boundary grooving in polycrystalline thin films in the cases of evaporation/condensation and diffusion taken separately. The t…
View article: New Solution of the Grain Boundary Grooving Problem in Polycrystalline Thin Films when Evaporation and Diffusion meet in Power Electronic Devices
New Solution of the Grain Boundary Grooving Problem in Polycrystalline Thin Films when Evaporation and Diffusion meet in Power Electronic Devices Open
This paper constituted an extension of two previous studies concerning the mathematical development of the grain boundary grooving in polycrystalline thins films in the cases of the evaporation/condensation and diffusion taken separately. …
View article: Thermal Fatigue Effect on the Grain Groove Profile in the Case of Diffusion in Thin Polycrystalline Films of Power Electronic Devices
Thermal Fatigue Effect on the Grain Groove Profile in the Case of Diffusion in Thin Polycrystalline Films of Power Electronic Devices Open
In a previous paper, we solved the partial differential equation of Mullins’ problem in the case of the evaporation–condensation in electronic devices and gave an exact solution relative to the geometric profile of the grain boundary groov…
View article: Thermal Fatigue Effect on the Grain Groove Profile in the Case of Diffusion in Thin Polycrystalline Films of Power Electronic Devices
Thermal Fatigue Effect on the Grain Groove Profile in the Case of Diffusion in Thin Polycrystalline Films of Power Electronic Devices Open
In a previous paper, we solved the partial differential equation of Mullins problem in the case of the evaporation-condensation in electronic devices and gave an exact solution relative to the geometric profile of the grain boundary groovi…
View article: Thermal Stress Analysis Comparison in IGBT Power Modules between DC and Switching Power Cycling
Thermal Stress Analysis Comparison in IGBT Power Modules between DC and Switching Power Cycling Open
International audience
View article: New model of crack propagation of aluminium wire bonds in IGBT power modules under low temperature variations
New model of crack propagation of aluminium wire bonds in IGBT power modules under low temperature variations Open
View article: Non-intrusive electro-thermo-mechanical reduced model for diagnosis and prognostic on IGBT power modules
Non-intrusive electro-thermo-mechanical reduced model for diagnosis and prognostic on IGBT power modules Open
International audience
View article: An EBSD Study of Fatigue Crack Propagation in Bonded Aluminum Wires Cycled from 55°C to 85°C
An EBSD Study of Fatigue Crack Propagation in Bonded Aluminum Wires Cycled from 55°C to 85°C Open
View article: Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cycling
Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cycling Open
View article: Analytical Model for Real-Time Junction Temperature Estimation of Multi-chip Power Module in PWM operation
Analytical Model for Real-Time Junction Temperature Estimation of Multi-chip Power Module in PWM operation Open
International audience
View article: Construction d'un modèle réduit PGD pour l'étude de la fissuration thermo-mécanique des modules de puissance
Construction d'un modèle réduit PGD pour l'étude de la fissuration thermo-mécanique des modules de puissance Open
International audience
View article: Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics
Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics Open
Insulated-gate bipolar transistors (IGBTs) are widely used components in power electronics applications. Upon operation, the difference in thermal expansion coefficients of materials composing the upper metallic parts causes thermal fatigu…
View article: A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices
A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices Open
View article: Model reduction for sensitivity analysis of solder joint fracture in power electronic modules
Model reduction for sensitivity analysis of solder joint fracture in power electronic modules Open
International audience
View article: Condition monitoring and evaluation of Ron degradation during power cycling in switching mode of SiC-Mosfets power modules
Condition monitoring and evaluation of Ron degradation during power cycling in switching mode of SiC-Mosfets power modules Open
International audience
View article: Effect of load sequence interaction on bond-wire lifetime due to power cycling
Effect of load sequence interaction on bond-wire lifetime due to power cycling Open
View article: Thermal behaviour evolution of an IGBT module after aging measured by thermoreflectance
Thermal behaviour evolution of an IGBT module after aging measured by thermoreflectance Open
View article: Wire-bond contact degradation modeling for remaining useful lifetime prognosis of IGBT power modules
Wire-bond contact degradation modeling for remaining useful lifetime prognosis of IGBT power modules Open
View article: Wire-bond Contact Degradation Modelling for Remaining Useful Lifetime Prognosis of IGBT Power Modules
Wire-bond Contact Degradation Modelling for Remaining Useful Lifetime Prognosis of IGBT Power Modules Open
View article: Remaining Useful Lifetime estimation for Electronic Power modules using an analytical degradation model
Remaining Useful Lifetime estimation for Electronic Power modules using an analytical degradation model Open
Power electronic modules undergo electro-thermal stresses due to power losses that lead to several kinds of degradations, and finally to failure. In order to prevent power electronic module failure, one should assess its state of health in…
View article: New solution of the partial differential equation of the grain groove profile problem in the case of evaporation/condensation
New solution of the partial differential equation of the grain groove profile problem in the case of evaporation/condensation Open
View article: Stress-Based Model for Lifetime Estimation of Bond Wire Contacts Using Power Cycling Tests and Finite-Element Modeling
Stress-Based Model for Lifetime Estimation of Bond Wire Contacts Using Power Cycling Tests and Finite-Element Modeling Open
In this paper, a lifetime model for bond wire contacts of Insulated Gate Bipolar Transistors (IGBT) power modules is reported. This model is based on power cycling tests obtained under accelerated conditions and a finite element model taki…
View article: Analytical Solutions to the Problem of the Grain Groove Profile
Analytical Solutions to the Problem of the Grain Groove Profile Open
During the last sixty years, the problem of the formation of grain boundary grooving in polycrystalline thin films, was largely studied, analyzed and commented. The thermal effect on the properties of the grain boundary grooving was first …
View article: Electrothermal Evaluation of Single and Multiple Solder Void Effects on Low-Voltage Si MOSFET Behavior in Forward Bias Conditions
Electrothermal Evaluation of Single and Multiple Solder Void Effects on Low-Voltage Si MOSFET Behavior in Forward Bias Conditions Open
Solder void thermal effects on power module performance and reliability were investigated long time ago. The final goal is to determine void acceptability criteria or to remove them. Our approach is not to offer a more efficient method for…