Xuepeng Zhan
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Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs Open
This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passi…
Cross-Temperature FeFETs Enabling Long- and Short-Term Memory for Reservoir Computing Network Open
Hardware neural networks based on emerging nonvolatile memory are promising candidates to overcome the Von Neumann computing bottleneck. This study investigates the device characteristics and reliability of ferroelectric field-effect trans…
Enhanced Ferroelectricity of Hf‐Based Memcapacitors by Adopting Ti Insert‐Layer and C–V Measurement for Constructing Energy‐Efficient Reservoir Computing Network Open
Hf‐based ferroelectric memcapacitors only consume dynamic power with the merits of reliable nonvolatile storage and Si‐process compatibility, which is an outstanding artificial synapse for constructing energy‐efficient neuromorphic computi…
Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability Open
Three-dimensional charge-trapping (CT) NAND flash memory has attracted extensive attention owing to its unique merits, including huge storage capacities, large memory densities, and low bit cost. The reliability property is becoming an imp…
View article: Van der Waals polarity-engineered 3D integration of 2D complementary logic
Van der Waals polarity-engineered 3D integration of 2D complementary logic Open
Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis 1–3 . Indeed, vertical complementary field-effect transistors (CFETs) bu…
View article: Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities
Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities Open
Flash memory has been widely adopted as stand-alone memory and embedded memory due to its robust reliability. However, the limited endurance obstacles its further applications in storage class memory (SCM) and to proceed endurance-required…
Flash-Based Computing-in-Memory Architecture to Implement High-Precision Sparse Coding Open
To address the concerns with power consumption and processing efficiency in big-size data processing, sparse coding in computing-in-memory (CIM) architectures is gaining much more attention. Here, a novel Flash-based CIM architecture is pr…
Sub-10 nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing Open
To break the von Neumann bottleneck, emerging non-volatile memories have gained extensive attention in hardware implementing neuromorphic computing. The device scaling with low operating voltage is of great importance for delivering a high…
An Efficient and Robust Partial Differential Equation Solver by Flash-Based Computing in Memory Open
Flash memory-based computing-in-memory (CIM) architectures have gained popularity due to their remarkable performance in various computation tasks of data processing, including machine learning, neuron networks, and scientific calculations…
View article: A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory
A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory Open
Ferroelectricity, one of the keys to realize non‐volatile memories owing to the remanent electric polarization, is an emerging phenomenon in the 2D limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materi…
View article: A gate programmable van der Waals metal-ferroelectric-semiconductor vertical heterojunction memory
A gate programmable van der Waals metal-ferroelectric-semiconductor vertical heterojunction memory Open
Ferroelectricity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using …
A gate-programmable van der Waals metal-ferroelectric-semiconductor memory Open
Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2…
Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case Open
In-memory computing is a promising solution to break through the conventional von Neumann bottleneck. Owing to the low-power consumption, Si fabrication compatibility and fast switching speed, the HfZrOx (HZO)-based ferroelectric devices a…
Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories Open
Temperature effects should be well considered when designing flash-based memory systems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories. In this work, aiming to comprehensi…
Dual-Point Technique for Multi-Trap RTN Signal Extraction Open
Random telegraph noise (RTN), as one dominant variation source in the ultra-scaled devices, has been attracting much more attention, and its analysis is of great importance to understand the fundamental physical mechanisms. In this work, w…
A Dual-Point Technique for the Entire I<sub>D</sub>–V<sub>G</sub> Characterization Into Subthreshold Region Under Random Telegraph Noise Condition Open
A simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charg…
The numerical method for predicting failure in single point incremental forming using a new anisotropic ductile fracture model Open
Although single point incremental forming (SPIF) possesses various advantages such as great simplicity and high flexibility, the major limitation is failure and fracture that result from extreme thinning along the thickness direction for c…
Real 3D microsphere lasers by femtosecond laser processing Open
Real 3D microspheres are fabricated using femtosecond laser processing and might be applicable for use as single-mode microlasers with controlled resonance wavelengths.