Zhehong Qian
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View article: A novel Self-Biased pMOS Clamped Deep Trench CSTBT with Enhanced Short-Circuit Capability
A novel Self-Biased pMOS Clamped Deep Trench CSTBT with Enhanced Short-Circuit Capability Open
In this work, a novel deep trench CSTBT (DT-CSTBT) features emitter trench and the P-layer is proposed and investigated by simulation. The self-biased pMOS, comprising an emitter trench, N-CS layer, P-layer, and P-well, demonstrates an exc…
View article: A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness
A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness Open
A novel high-speed and process-compatible carrier-stored trench-gate bipolar transistor (CSTBT) combined with split-gate technology is proposed in this paper. The device features a split polysilicon electrode in the trench, where the left …