Zhigang Jia
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View article: A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics
A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics Open
To investigate the performance degradation of a vertical-cavity surface-emitting laser (VCSEL) caused by self-heating effects, a 940 nm VCSEL with a buried tunnel junction (BTJ) and an aperture size of 10 μm was designed. The BTJ-type VCSE…
View article: Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance
Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance Open
An electrically injected vertical-cavity surface-emitting laser (VCSEL) with quantum-well-embedded InGaN quantum dots (QDs) as the active region was designed. The InGaN QD size and cavity length were optimized using PICS3D simulation softw…
View article: Effect of microstructural inheritance window on the mechanical properties of an intercritically annealed Q&P steel
Effect of microstructural inheritance window on the mechanical properties of an intercritically annealed Q&P steel Open
Different initial microstructures significantly influence the final microstructures and mechanical properties of the intercritically annealed quenching and partitioning steels. Previous studies have primarily focused on the mechanism for t…
View article: Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays
Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays Open
3D micro-nano devices are expected to become the mainstay of multi-color solid-state lighting in the future because of their broad-band characteristic and the advantage of integrating the monolithic light-emitting diode on a single chip. I…
View article: InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure
InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure Open
A n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetrical barrier is designed in order to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses …
View article: Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer
Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer Open
Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV LEDs) has attracted increasing attention. Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, …
View article: Numerical study on photoelectric properties of semi-polar 1011 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers
Numerical study on photoelectric properties of semi-polar 1011 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers Open
Semi-polar 101̄1 green InGaN light-emitting diodes with different quantum barrier materials were numerically investigated by considering the In composition fluctuation model. For the green light-emitting diode using quaternary Al0.05In0.1Ga…
View article: Considerations for Making Steel Plants CCS-Ready in China
Considerations for Making Steel Plants CCS-Ready in China Open
The steel sector is one of the largest industrial sources of CO2 emissions, contributing around 28% of the global industry sector's direct greenhouse gas emissions.One crucial technological option for decreasing emissions is carbon capture…
View article: Structural design and optimization for vent holes of an industrial turbine sealing disk
Structural design and optimization for vent holes of an industrial turbine sealing disk Open
Severe stress concentration occurs around circular vent holes of an industrial turbine sealing disk. This paper investigates the structural design and optimization for the vent holes to effectively reduce the maximum von Mises stress and i…
View article: Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness
Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness Open
High-density V-shaped pits cause that InGaN/GaN multi-quantum well becomes QD/QW hybrid structure, and the internal quantum efficiency of the hybrid structure is improved by increasing the thickness of GaN barrier.
View article: GaN epitaxial layers grown on multilayer graphene by MOCVD
GaN epitaxial layers grown on multilayer graphene by MOCVD Open
In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backs…
View article: Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip
Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip Open
A InGaN/GaN micro-square array light-emitting diode (LED) chip (micro-chip) has been successfully fabricated by the focused ion beam (FIB) etching technique, which can reduce ohmic contact degradation in the fabrication process of three-di…