Zhihe Xia
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View article: A 6-bit Analog-to-Digital Converter for Electromyography Implemented Using N-Type Metal-Oxide Thin-Film Transistors
A 6-bit Analog-to-Digital Converter for Electromyography Implemented Using N-Type Metal-Oxide Thin-Film Transistors Open
Consisting of more than 2000 n-type metal-oxide thin-film transistors (TFTs), a 6-bit analog-to-digital converter (ADC) adopting the subranging architecture is designed, fabricated, characterized and applied to digitize an electromyogram (…
View article: An Integrated Analog Front‐End System on Flexible Substrate for the Acquisition of Bio‐Potential Signals
An Integrated Analog Front‐End System on Flexible Substrate for the Acquisition of Bio‐Potential Signals Open
The application of a versatile, low‐temperature thin‐film transistor (TFT) technology is presently described as the implementation on a flexible substrate of an analog front‐end (AFE) system for the acquisition of bio‐potential signals. Th…
View article: Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors
Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors Open
The low–temperature poly–Si oxide (LTPO) backplane is realized by monolithically integrating low–temperature poly–Si (LTPS) and amorphous oxide semiconductor (AOS) thin–film transistors (TFTs) in the same display backplane. The LTPO–enable…
View article: P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors
P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors Open
Presently reported is the use of plasma fluorination treatment based on tetrafluoromethane to enhance the performance of a p‐type SnO thin‐film transistor (TFT). The improved performance metrics include a larger on/off current ratio, a sma…