Explanipedia

Chloride Modulation Doping in Dual-Channel InGaZnO Synaptic Transistors: Location-Selective Strategy for Synaptic Plasticity Enhancement Open

Jie-Fei Jiang, Zehao Lin · 2025

Study on the Preparation of Diamond Film Substrates on AlN Ceramic and Their Performance in LED Packaging Open

Shasha Wei, Yingrui Sui, Yunlong Shi, Junrong Chen, Tungalag Dong , et al. · 2025

Aluminum nitride (AlN) ceramic materials have relatively low thermal conductivity and poor heat dissipation performance, and are increasingly unsuitable for high-power LED packaging. In this study, diamond films were deposited on AlN ceram…

Ultralow Voltage Operation of p‐ and n‐FETs Enabled by Self‐Formed Gate Dielectric and Metal Contacts on 2D Tellurium Open

Chang Niu, Linjia Long, Yizhi Zhang, Zehao Lin, Pukun Tan , et al. · 2025

The ongoing demand for more energy‐efficient, high‐performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a crucial role due to the continuous downscaling of device dimens…

Knowledge Atlas and emerging trends on the impact of mindfulness on tumors: a bibliometric analysis Open

Zehao Lin, Zeqi Ji, Jinyao Wu, Huiting Tian, Qiuping Yang , et al. · 2024

Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium Open

Chang Niu, Linjia Long, Yizhi Zhang, Zehao Lin, Pukun Tan , et al. · 2024

The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a crucial role due to the continuous downscaling of device dimens…

Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (HZO)-based MFIM Open

Tae Ryong Kim, Revanth Koduru, Zehao Lin, Peide D. Ye, Sumeet Kumar Gupta · 2024

Device-to-device variations in ferroelectric (FE) hafnium oxide (HfO2)-based devices pose a crucial challenge that limits the otherwise promising capabilities of this technology. Although previous simulation-based studies have identified p…

Review—Extremely Thin Amorphous Indium Oxide Transistors Open

Adam Charnas, Zhuocheng Zhang, Zehao Lin, Dongqi Zheng, Jie Zhang , et al. · 2023

Amorphous oxide semiconductor transistors have been a mature technology in display panels for upward of a decade, and have recently been considered as promising back‐end‐of‐line compatible channel materials for monolithic 3D applications. …

Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO2-Based Artificial Neurons Open

Hongyi Dou, Zehao Lin, Zedong Hu, Benson Kunhung Tsai, Dongqi Zheng , et al. · 2023

Filamentary-type resistive switching devices, such as conductive bridge random-access memory and valence change memory, have diverse applications in memory and neuromorphic computing. However, the randomness in filament formation poses cha…

Calibrating the Cepheid Period--Wesenheit Relation in the Gaia Bands using Galactic Open Cluster Cepheids Open

Zehao Lin, Ye Xu, Chaojie Hao, Dejian Liu, Yingjie Li , et al. · 2022

Establishing the period--Wesenheit relation requires independent and accurate distance measurements of classical Cepheids (DCEPs). The precise distance provided by an associated open cluster independently calibrates the period--Wesenheit r…

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method Open

Ziheng Wang, Zehao Lin, Mengwei Si, Peide D. Ye · 2022

Oxide semiconductors have attracted revived interest for complementary metal–oxide–semiconductor (CMOS) back-end-of-line (BEOL) compatible devices for monolithic 3-dimensional (3D) integration. To obtain a high-quality oxide/semiconductor …

A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current Open

Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao, Vahid Askarpour, Hongyi Dou , et al. · 2022

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/μm (near 20 mA…

A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current Open

Zehao Lin, Mengwei Si, Vahid Askarpour, Chang Niu, Adam Charnas , et al. · 2022

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate …

Scaled indium oxide transistors fabricated using atomic layer deposition Open

Mengwei Si, Zehao Lin, Zhizhong Chen, Xing Sun, Haiyan Wang , et al. · 2022

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors Open

Mengwei Si, Yaoqiao Hu, Zehao Lin, Xing Sun, Adam Charnas , et al. · 2020

In this work, we demonstrate enhancement-mode field-effect transistors by an atomic-layer-deposited (ALD) amorphous In₂O₃ channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and e…

The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors Open

Mengwei Si, Zehao Lin, Jinhyun Noh, Junkang Li, Wonil Chung , et al. · 2020

In this work, channel semiconductor is identified and demonstrated to have significant impact on the memory characteristics of ferroelectric field-effect transistors (Fe-FETs). It is understood that, to achieve high electron density at on-…

Signature of quantum Griffiths singularity state in a layered quasi-one-dimensional superconductor Open

Enze Zhang, Jinhua Zhi, Yichao Zou, Zefang Ye, Linfeng Ai , et al. · 2018

Chiral Landau levels in Weyl semimetal NbAs with multiple topological carriers Open

Xiang Yuan, Zhongbo Yan, Chaoyu Song, Mengyao Zhang, Zheng Li , et al. · 2018

Recently, Weyl semimetals have been experimentally discovered in both inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The non-trivial topology in Weyl semimetals can manifest itself with exotic phenomena, which ha…

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