Zih-Wei Peng
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View article: Mhz-Frequency Mnzn Ferrites with Low Loss by Co-Doping with Rare Earth Oxides
Mhz-Frequency Mnzn Ferrites with Low Loss by Co-Doping with Rare Earth Oxides Open
View article: Screen-Printed Aluminium Contacts on n+-Doped Silicon
Screen-Printed Aluminium Contacts on n+-Doped Silicon Open
In this paper the conditions for forming contacts to n+-Si using a low-cost aluminium (Al) thick film paste material and screen printing technique in combination with conventional high temperature belt furnace sintering were investigated. …
View article: Inserting a Low-Refractive-Index Dielectric Rear Reflector into PERC Cells: Challenges and Opportunities
Inserting a Low-Refractive-Index Dielectric Rear Reflector into PERC Cells: Challenges and Opportunities Open
One of the simplest and most effective ways to reduce the operating temperature of photovoltaic systemsin the field is to reflect unusable, 'sub-bandgap' lightwith energies below the cell absorber's bandgap energy. In this work, low-refrac…
View article: Towards 22% efficiency n-PERT rear junction solar cells with screen printed Al point back contact
Towards 22% efficiency n-PERT rear junction solar cells with screen printed Al point back contact Open
In this work, we present an n-type Passivated Emitter and Rear Totally diffused Rear Junction (n-PERT-RJ) solar cell structure with a dot-shaped Laser Contact Opening (LCO) pattern on the rear side. The fully screen printed devices are inv…
View article: Investigation of laser contact opening pitch affecting the void formation on n-Type rear emitter silicon solar cells
Investigation of laser contact opening pitch affecting the void formation on n-Type rear emitter silicon solar cells Open
The pitch of the rear side laser contact opening (LCO) strongly influences the performance of n-type Passivated Emitter and Rear Totally diffused (n-PERT) solar cells. The rear emitter of a back junction (BJ) cell was formed by boron dopin…
View article: Investigation of In-Situ Annealing during Physical Vapour Deposition of Al Rear Contacts on n-PERT Rear Junction Crystalline Silicon Solar Cells
Investigation of In-Situ Annealing during Physical Vapour Deposition of Al Rear Contacts on n-PERT Rear Junction Crystalline Silicon Solar Cells Open
We introduce a new thermal evaporation system featuring good contact formation without a post deposition annealing process developed by SINGULUS. Compared to an in-line high-rate thermal evaporation system, the new metallization technology…
View article: Toward 21% Efficiency nPERT Solar Cells with Selective Back Surface Field Technique
Toward 21% Efficiency nPERT Solar Cells with Selective Back Surface Field Technique Open
We have demonstrated 20.83% large-area conversion efficiency with selective Back Surface Field(s-BSF) on the n-type Passivated Emitter, Rear Totally (nPERT) cell structure. Industrial 156 mm (6" inch) n-type Czochralski mono-crystalline si…
View article: Investigation on Blistering Behavior for n-type Silicon Solar Cells
Investigation on Blistering Behavior for n-type Silicon Solar Cells Open
Thermal treatment with different gas environment before the Al2O3 ALD passivation process plays a key role to the presence of blistering. The specific silanol group vibration peaks in FT-IR spectra confirm the mechanism of the blistering f…