Non-volatile memory ≈ Non-volatile memory
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Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes Open
Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as fe…
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Neuromorphic computing using non-volatile memory Open
Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems. We first review recent advances in the application of NV…
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Resistive switching memories based on metal oxides: mechanisms, reliability and scaling Open
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and scalable memory technologies are being researched for data storage and data-driven computation. Among the emerging memories, resistive switching…
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Memristive technologies for data storage, computation, encryption, and radio-frequency communication Open
Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memo…
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Nonvolatile ferroelectric domain wall memory Open
A nonvolatile highly scalable multilevel memory based on ferroelectric domain walls is demonstrated.
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Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing Open
With the advent of the big data era, applications are more data-centric and energy efficiency issues caused by frequent data interactions, due to the physical separation of memory and computing, will become increasingly severe. Emerging te…
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Nonvolatile Memories Based on Graphene and Related 2D Materials Open
The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high‐capacity storage to replace hard disk drives, fuelli…
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Fast and reliable storage using a 5 bit, nonvolatile photonic memory cell Open
This is the final version. Available from Optical Society of America via the DOI in this record.
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Challenges and Applications of Emerging Nonvolatile Memory Devices Open
Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer to…
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Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing Open
Many in-memory computing frameworks demand electronic devices with specific switching characteristics to achieve the desired level of computational complexity. Existing memristive devices cannot be reconfigured to meet the diverse volatile…
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Memory materials and devices: From concept to application Open
Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requi…
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Status and Prospects of ZnO-Based Resistive Switching Memory Devices Open
In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for th…
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Ferroelectric materials for neuromorphic computing Open
Ferroelectric materials are promising candidates for synaptic weight elements in neural network hardware because of their nonvolatile multilevel memory effect. This feature is crucial for their use in mobile applications such as inference …
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CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory Open
A unique three-dimensional integration strategy is provided for high-performance, ultrahigh-density ferroelectric memory.
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Nonvolatile infrared memory in MoS <sub>2</sub> /PbS van der Waals heterostructures Open
Researchers demonstrate a nonvolatile infrared memory cell operating in the optical communication wavebands.
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A review of memristor: material and structure design, device performance, applications and prospects Open
With the booming growth of artificial intelligence (AI), the traditional von Neumann computing architecture based on complementary metal oxide semiconductor devices are facing memory wall and power wall. Memristor based in-memory computing…
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Ferroelectric HfO<sub>2</sub>-based materials for next-generation ferroelectric memories Open
Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O 3 and SrBi 2 Ta 2 O 9 , has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer fr…
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Nanoscale resistive switching memory devices: a review Open
In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I-V behaviour and the underlying physical switching mechanisms. By means of the most important representa…
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Silicon Oxide (SiO<i><sub>x</sub></i>): A Promising Material for Resistance Switching? Open
Interest in resistance switching is currently growing apace. The promise of novel high‐density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications …
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An accurate locally active memristor model for S-type negative differential resistance in NbOx Open
A number of important commercial applications would benefit from the introduction of easily manufactured devices that exhibit current-controlled, or “S-type,” negative differential resistance (NDR). A leading example is emerging non-volati…
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A Fully Printed Flexible MoS<sub>2</sub> Memristive Artificial Synapse with Femtojoule Switching Energy Open
Realization of memristors capable of storing and processing data on flexible substrates is a key enabling technology toward “system‐on‐plastics”. Recent advancements in printing techniques show enormous potential to overcome the major chal…
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Multilevel HfO2-based RRAM devices for low-power neuromorphic networks Open
Training and recognition with neural networks generally require high throughput, high energy efficiency, and scalable circuits to enable artificial intelligence tasks to be operated at the edge, i.e., in battery-powered portable devices an…
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Ferroelectric Control of the Spin Texture in GeTe Open
The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as…
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A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement Open
An ultrathin, stretchable memory skin patch that can reliably store bio-signals such as heart rate is newly developed.
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Emergent ferroelectricity in subnanometer binary oxide films on silicon Open
The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. We report on the thickness-d…
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A phase-change memory model for neuromorphic computing Open
Phase-change memory (PCM) is an emerging non-volatile memory technology that is based on the reversible and rapid phase transition between the amorphous and crystalline phases of certain phase-change materials. The ability to alter the con…
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Pathways to efficient neuromorphic computing with non-volatile memory technologies Open
Historically, memory technologies have been evaluated based on their storage density, cost, and latencies. Beyond these metrics, the need to enable smarter and intelligent computing platforms at a low area and energy cost has brought forth…
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Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory Open
Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-power, nonvolatile memories and made FE memories a commercial reality. Despite these advances, progress on commercial FE-RAM based on lead zirconium ti…
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Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension Open
Memristor is a promising building block for the next generation nonvolatile random access memory and bio-inspired computing systems. Organizing memristors into high density crossbar arrays, although challenging, is critical to meet the eve…
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Nonvolatile Multistates Memories for High-Density Data Storage Open
In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent re…