Gate driver
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Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs Open
In this paper, benchmark of Si IGBT, SiC MOSFET and GaN HEMT power switches at 600V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, out…
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A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory Open
The trend in power electronic applications is to reach higher power density and higher efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC MOSFET) are of great interest because they can work at higher switc…
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A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI Open
Active gate driving has been demonstrated to beneficially shape switching waveforms in Si- and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far…
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Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices Open
This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist…
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Online Junction Temperature Monitoring Using Intelligent Gate Drive for SiC Power Devices Open
Junction temperature is a prime design/operation parameter, as well as, a main indicator of device's health condition for power electronics converters. Compared to its silicon (Si) counterparts, it is more critical for silicon carbide (SiC…
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A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices Open
New packaging solutions and power module structures are required to fully utilize the benefits of emerging commercially available wide bandgap semiconductor devices. Conventional packaging solutions for power levels of a few kilowatt are b…
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A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development Open
Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching f…
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Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter Open
High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the reliability and safety of the gate driver for power semiconductor devices. This article focuses on the design of a high-voltage-insulated GDPS for the 10-…
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Gate–Emitter Pre-threshold Voltage as a Health-Sensitive Parameter for IGBT Chip Failure Monitoring in High-Voltage Multichip IGBT Power Modules Open
IEEE This paper proposes a novel health sensitive parameter, called the gate-emitter pre-threshold voltage VGE(pre-th), for detecting IGBT chip failures in multichip IGBT power modules. The proposed method has been applied in an IGBT gate …
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Experimental Investigation on the Transient Switching Behavior of SiC MOSFETs Using a Stage-Wise Gate Driver Open
A multiple stage gate driver for SiC MOSFETs based on a switched resistor topology is introduced and a hardware realization is presented. The measurement setup is shown in detail to highlight the quality of the shown measurement results. T…
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Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range Open
The optimal gate delay time control between the two internal devices to achieve the excellent electrical and thermal performance of the Si/SiC hybrid switch is considerably affected by several factors and requires careful adjustment to sui…
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Multi-level active gate driver for SiC MOSFETs Open
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expec…
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High precision gate signal timing control based active voltage balancing scheme for series-connected fast switching field-effect transistors Open
Due to the low availability, high cost, and limited performance of high voltage power devices in high voltage high power applications, series-connection of low voltage switches is commonly considered. Practically, because of the dynamic vo…
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Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies Open
The reverse-conducting insulated gate bipolar transistor (RC-IGBT) has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but n…
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Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost Open
This paper presents a high-speed, low loss, and low noise gate driver for silicon-carbide (SiC) MOSFETs. We propose a gate boost circuit to reduce the switching loss and delay time without increasing the switching noise. The proposed gate …
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An FPGA-Based Voltage Balancing Control for Multi-HV-IGBTs in Series Connection Open
The series connection of insulated gate bipolar transistors (IGBTs) allows operation at voltage levels higher than the rated voltage of one IGBT and has less power semiconductor costs compared to multilevel topologies. However, voltage unb…
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Optimized Design of Multi-MHz Frequency Isolated Auxiliary Power Supply for Gate Drivers in Medium-Voltage Converters Open
WOS:000565874800033
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Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications Open
Fast switching characteristic of wide bandgap devices enables high switching frequency of power devices and thereby, can facilitate high fundamental frequency operation of electrical machines. However, with the switching transition times i…
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Optimization Platform to Find a Switching Pattern of Digital Active Gate Drive for Reducing Both Switching Loss and Surge Voltage Open
A gate driving for power devices is a key technology to further improve switching characteristics. With the help of digital gate driver IC, the switching behavior of power devices can be enhanced even under high-speed switching. In this pa…
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Gate driver for the active thermal control of a DC/DC GaN-based converter Open
Wide-Band-Gap power semiconductors based on SiC and GaN offer some significant advantages compared to Si-devices, in particular higher switching speed and higher operating temperature. These features offer potentially increased power densi…
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Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter Open
The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk pheno…
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CMOS Active Gate Driver for Closed-Loop d<i>v</i>/d<i>t</i> Control of GaN Transistors Open
International audience
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High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs Open
In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three different isolation process options, aimed at improvi…
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Full Custom Design of an Arbitrary Waveform Gate Driver With 10-GHz Waypoint Rates for GaN FETs Open
Active gate driving of power devices seeks to shape switching trajectories via the gate, for example, to reduce EMI without degrading efficiency. To this end, driver ICs with integrated arbitrary waveform generators have been used to achie…
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A hybrid Si IGBT and SiC MOSFET module development Open
A compact wirebond packaged phase-leg SiC/Si hybrid module was designed, developed, and tested. Details of the layout and gate drive designs are described. The IC chip for gate drive is carefully selected and compared. Dual pulse test conf…
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High-speed gate drive circuit for SiC MOSFET by GaN HEMT Open
This paper focuses on a development and an evaluation of high-speed gate drive circuit for SiC power MOSFET by GaN HEMT. The increasing requests to SiC power devices face to the difficulty of the gate drive because of the mismatching betwe…
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A Test Environment for Power Semiconductor Devices Using a Gate-Boosting Circuit Open
For semiconductor-based pulsed power generators, short turn-ON and turn-OFF times of the employed switching elements are especially in hard switching condition of advantage. In order to enhance switching speeds for standard devices under h…
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Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays Open
Amorphous IGZO thin-film transistors (TFTs) in an etch stop layer (ESL) structure was processed on 2500 mm × 2200 mm size substrate. The fabricated devices exhibit enhancement mode characteristics, and excellent uniformity over large area.…
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Monitoring of Gate Leakage Current on SiC Power MOSFETs: An Estimation Method for Smart Gate Drivers Open
Silicon Carbide (SiC) power transistors are more and more used in electric energy conversion systems. SiC power semiconductors devices, such as SiC metal-oxide-semiconductor field-effect transistor (mosfet) can operate at higher frequency …
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A Single Passive Gate-Driver for Series-Connected Power Devices in DC Circuit Breaker Applications Open
This letter proposes a novel single passive gate driver solution based on passive devices to control series-connected power semiconductor devices for dc circuit breaker (DCCB) applications. The transient suppression devices (e.g., metal ox…