Elastic recoil detection
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Properties and Classification of Diamond-Like Carbon Films Open
Diamond-like carbon (DLC) films have been extensively applied in industries owing to their excellent characteristics such as high hardness. In particular, there is a growing demand for their use as protective films for mechanical parts owi…
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Atomic layer deposition of molybdenum oxide from (N<i>t</i>Bu)2(NMe2)2Mo and O2 plasma Open
Molybdenum oxide (MoOx) films have been deposited by atomic layer deposition using bis(tert-butylimido)-bis(dimethylamido)molybdenum and oxygen plasma, within a temperature range of 50–350 °C. Amorphous film growth was observed between 50 …
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A combined segmented anode gas ionization chamber and time-of-flight detector for heavy ion elastic recoil detection analysis Open
A dedicated detector system for heavy ion elastic recoil detection analysis at the Tandem Laboratory of Uppsala University is presented. Benefits of combining a time-of-flight measurement with a segmented anode gas ionization chamber are d…
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Galvanostatic Ion Detrapping Rejuvenates Oxide Thin Films Open
Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvanostatic treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. H…
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Atomic Layer Deposition of Rhenium Disulfide Open
2D materials research is advancing rapidly as various new “beyond graphene” materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenid…
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Oxyhydride Nature of Rare-Earth-Based Photochromic Thin Films Open
Thin films of rare-earth (RE)-oxygen-hydrogen compounds prepared by reactive magnetron sputtering show a unique color-neutral photochromic effect at ambient conditions. While their optical properties have been studied extensively, the unde…
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Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2 Open
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers o…
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Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films Open
X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample sur…
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Low-Temperature Atomic Layer Deposition of Cobalt Oxide as an Effective Catalyst for Photoelectrochemical Water-Splitting Devices Open
We have developed a low-temperature atomic layer deposition (ALD) process for depositing crystalline and phase pure spinel cobalt oxide (Co3O4) films at 120 °C using [Co(tBu2DAD)2] and ozone as coreagent. X-ray diffraction, UV–vis spectros…
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High Si content TiSiN films with superior oxidation resistance Open
The high-temperature oxidation resistance of Ti1-xSixN films with Si content varying in wide range, 0.13 ≤ x ≤ 0.91, is evaluated. Films are grown in Ar/N2 atmospheres using a hybrid high-power impulse and dc magnetron sputtering (HiPIMS/D…
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Systematic compositional analysis of sputter-deposited boron-containing thin films Open
Boron-containing materials exhibit a unique combination of ceramic and metallic properties that are sensitively dependent on their given chemical bonding and elemental compositions. However, determining the composition, let alone bonding, …
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Mixed-mode high-power impulse magnetron sputter deposition of tetrahedral amorphous carbon with pulse-length control of ionization Open
High-power impulse magnetron sputtering (HiPIMS) is used to deposit amorphous carbon thin films with sp3 fractions of 13% to 82%. Increasing the pulse length results in a transition from conventional HiPIMS deposition to a “mixed-mode” in …
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Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma Open
HfO2 thin films were prepared by plasma-enhanced atomic layer deposition using a cyclopentadienyl-alkylamido precursor [HfCp(NMe2)3, HyALD™] and an O2 plasma over a temperature range of 150–400 °C at a growth per cycle around 1.1 Å/cycle. …
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Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films Open
Niobium pentoxide was deposited using tBuN=Nb(NEt2)3 as niobium precursor by both thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PE-ALD) with H2O and O2 plasma as coreactants, respectively. The depositio…
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Effects of sp2/sp3 Ratio and Hydrogen Content on In Vitro Bending and Frictional Performance of DLC-Coated Orthodontic Stainless Steels Open
This study investigated a diamond-like carbon (DLC) coating formed on stainless steels (disk and wire specimens) using a plasma-based ion implantation/deposition method with two different parameters (DLC-1, DLC-2). These specimens were cha…
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Examination of Water Quantification and Incorporation in Transition Zone Minerals: Wadsleyite, Ringwoodite and Phase D Using ERDA (Elastic Recoil Detection Analysis) Open
International audience
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What Determines the Electrochemical Properties of Nitrogenated Amorphous Carbon Thin Films? Open
Linking structural and compositional features with the observed electrochemical performance is often ambiguous and sensitive to known and unknown impurities. Here an extensive experimental investigation augmented by computational analyses …
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On the chemical composition of TiAlN thin films - Comparison of ion beam analysis and laser-assisted atom probe tomography with varying laser pulse energy Open
We compare the chemical composition of TiAlN thin films determined by ion beam analysis and laser-assisted atom probe tomography (APT). The laser pulse energy during APT was increased subsequently from 10 to 20, 30, 40, 50, 100 and 200 pJ …
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Extended metastable Al solubility in cubic VAlN by metal-ion bombardment during pulsed magnetron sputtering: film stress <i>vs</i> subplantation Open
Dynamic ion-recoil mixing of near-film-surface atomic layers is commonly used to increase the metastable solubility limit xmax in otherwise immiscible thin film systems during physical vapor deposition. Recently, Al subplantation achieved …
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Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering Open
The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CNx) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was…
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Electric field strength-dependent accuracy of TiAlN thin film composition measurements by laser-assisted atom probe tomography Open
Accurate quantification of absolute concentrations represents a major challenge for atom probe tomography (APT) since the field evaporation process is affected significantly by the measurement parameters. In the present work we investigate…
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In-situ measurements of magmatic volatile elements, F, S, and Cl, by electron microprobe, secondary ion mass spectrometry, and heavy ion elastic recoil detection analysis Open
Electron probe and ion probe are the two most used instruments for in situ analysis of halogens in geological materials. The comparison of these two methods on widely distributed glass standards (example: MPI-DING glasses, Jochum et al., G…
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Assessing boron quantification and depth profiling of different boride materials using ion beams Open
We assessed the capability to quantify and depth profile boron in different materials by a number of ion beam-based techniques. Specifically, the depth resolution, probing depth, film homogeneity, and detection limit for boron using partic…
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Analysis of Hydrogen in Inorganic Materials and Coatings: A Critical Review Open
The currently used bulk analysis and depth profiling methods for hydrogen in inorganic materials and inorganic coatings are reviewed. Bulk analysis of hydrogen is based on fusion of macroscopic samples in an inert gas and the detection of …
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Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films Open
The influence of the substrate temperature and argon gas flow on the compositional, structural, optical, and light emission properties of amorphous hydrogenated silicon carbonitride (a-SiCxNy:H) thin films were studied. Thin films were fab…
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Formation of swift heavy ion tracks on a rutile TiO<sub>2</sub> (001) surface Open
Nanostructuring of surfaces and two-dimensional materials using swift heavy ions offers some unique possibilities owing to the deposition of a large amount of energy localized within a nanoscale volume surrounding the ion trajectory. To fu…
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Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor Open
Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the fil…
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High‐Quality Si‐Doped β‐Ga<sub>2</sub>O<sub>3</sub> Films on Sapphire Fabricated by Pulsed Laser Deposition Open
Pulsed laser ablation is used to form high‐quality silicon‐doped β‐Ga 2 O 3 films on sapphire by alternatively depositing Ga 2 O 3 and Si from two separate sources. X‐ray analysis reveals a single crystallinity with a full width at half ma…
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Deuterium retention and erosion in liquid Sn samples exposed to D2 and Ar plasmas in GyM device Open
The use of tin (Sn) as a liquid metal for plasma facing components has been recently proposed as a solution to the high heat load issue on the divertor target plates in nuclear fusion reactors. Due to its low vapor pressure, low reactivity…
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Opto-Structural Properties of Silicon Nitride Thin Films Deposited by ECR-PECVD Open
Amorphous hydrogenated silicon nitride thin films a-SiNx:H (abbreviated later by SiNx) were deposited by Electron Cyclotron Resonance plasma enhanced chemical vapor deposition method (ECR-PECVD). By changing ratio of gas flow (R = NH3/SiH4…