Strain engineering
View article: Stress engineering in ferroelectric hafnium oxide for tuning epitaxial orientation
Stress engineering in ferroelectric hafnium oxide for tuning epitaxial orientation Open
The development of next generation computing paradigms and memory devices relies on exploiting the unique properties of ferroelectric materials. Hafnium oxide-based ferroelectrics, which are highly compatible with semiconductor processing,…
View article: Topological Defect Mediated Helical Phase Reorientation by Uniaxial Stress
Topological Defect Mediated Helical Phase Reorientation by Uniaxial Stress Open
Strain engineering enables precise, energy-efficient control of nanoscale magnetism. However, unlike well-studied strain-dislocation interactions in mechanical deformation, the spatial evolution of strain-induced spin rearrangement remains…
View article: Giant Valley Polarizationin Bipolar FerromagneticSemiconductors SmX<sub>2</sub> (X = Cl, Br, I) Monolayers under Strain
Giant Valley Polarizationin Bipolar FerromagneticSemiconductors SmX<sub>2</sub> (X = Cl, Br, I) Monolayers under Strain Open
The discovery and characterization of two-dimensional (2D) ferrovalley materials represent a significant advancement in the field of materials science and electronics. Herein, we utilize first-principles calculations to predict and investi…
View article: Strain engineering of ScN thin films and its effect on optical, electrical, and thermoelectric properties
Strain engineering of ScN thin films and its effect on optical, electrical, and thermoelectric properties Open
Insertion of crystal defects (dislocations, point defects and lattice distortion) plays a crucial role in thermoelectric/optical properties and can be controlled in thin films of the narrow-band-gap semiconductor ScN.
View article: Strain-Tunable Topological Superconductivity in Moiré Heterostructures
Strain-Tunable Topological Superconductivity in Moiré Heterostructures Open
Moiré heterostructures, formed by stacking two-dimensional materials with a small twist angle or lattice mismatch, have emerged as a versatile platform for engineering quantum phenomena, including superconductivity. This paper explores the…
View article: Strain-Tunable Topological Superconductivity in Moiré Heterostructures
Strain-Tunable Topological Superconductivity in Moiré Heterostructures Open
Moiré heterostructures, formed by stacking two-dimensional materials with a small twist angle or lattice mismatch, have emerged as a versatile platform for engineering quantum phenomena, including superconductivity. This paper explores the…
View article: HoleCurrent Enhancement Using W<sub>1–<i>x</i></sub>Cr<sub><i>x</i></sub>Se<sub>2</sub> AlloyInterface for p‑Type WSe<sub>2</sub> FETs
HoleCurrent Enhancement Using W<sub>1–<i>x</i></sub>Cr<sub><i>x</i></sub>Se<sub>2</sub> AlloyInterface for p‑Type WSe<sub>2</sub> FETs Open
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation semiconductor devices. Among TMDs, tungsten diselenide (WSe2) is regarded as an ideal material for p-type fiel…
View article: Protected valley splitting against interface disorder toward scalable silicon electron spin qubits
Protected valley splitting against interface disorder toward scalable silicon electron spin qubits Open
Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from un…
View article: Protected valley splitting against interface disorder toward scalable silicon electron spin qubits
Protected valley splitting against interface disorder toward scalable silicon electron spin qubits Open
Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from un…
View article: Flash Lamp Annealing Enables Dislocation Density Reduction and Probing of Defect Dynamics in Epitaxial Germanium for On‑Chip Integration
Flash Lamp Annealing Enables Dislocation Density Reduction and Probing of Defect Dynamics in Epitaxial Germanium for On‑Chip Integration Open
Germanium (Ge) is a promising semiconductor for on-chip photonics, but its monolithic integration on silicon (Si) platforms remains hindered by thermal processes incompatible with CMOS technology. Flash-lamp annealing (FLA) emerges as a vi…
View article: Epitaxial StrainEngineering of High-Quality FreestandingSingle-Crystalline Complex Oxides
Epitaxial StrainEngineering of High-Quality FreestandingSingle-Crystalline Complex Oxides Open
Freestanding strongly correlated complex oxide thin films hold great potential in next-generation electronic and energy applications. Their high integrability and tunable properties may surpass those in bulk or epitaxial films. Water-assis…
View article: Epitaxial StrainEngineering of High-Quality FreestandingSingle-Crystalline Complex Oxides
Epitaxial StrainEngineering of High-Quality FreestandingSingle-Crystalline Complex Oxides Open
Freestanding strongly correlated complex oxide thin films hold great potential in next-generation electronic and energy applications. Their high integrability and tunable properties may surpass those in bulk or epitaxial films. Water-assis…
View article: Epitaxial StrainEngineering of High-Quality FreestandingSingle-Crystalline Complex Oxides
Epitaxial StrainEngineering of High-Quality FreestandingSingle-Crystalline Complex Oxides Open
Freestanding strongly correlated complex oxide thin films hold great potential in next-generation electronic and energy applications. Their high integrability and tunable properties may surpass those in bulk or epitaxial films. Water-assis…
View article: Fabricationof a Strained-Silicon/Sapphire Heterostructure-BasedBroadband Photodetector
Fabricationof a Strained-Silicon/Sapphire Heterostructure-BasedBroadband Photodetector Open
Strained silicon shows enormous potential in photoelectric detection with an adjustable band structure and carrier dynamics. Herein, crystalline silicon with controllable strain is fabricated on a sapphire wafer by ultrafast laser-induced …
View article: Epitaxial StrainEngineering of High-Quality FreestandingSingle-Crystalline Complex Oxides
Epitaxial StrainEngineering of High-Quality FreestandingSingle-Crystalline Complex Oxides Open
Freestanding strongly correlated complex oxide thin films hold great potential in next-generation electronic and energy applications. Their high integrability and tunable properties may surpass those in bulk or epitaxial films. Water-assis…
View article: Overcoming the LatticeMismatch Barrier for AtomicReconstruction in MoSe<sub>2</sub>/MoS<sub>2</sub> Heterobilayers
Overcoming the LatticeMismatch Barrier for AtomicReconstruction in MoSe<sub>2</sub>/MoS<sub>2</sub> Heterobilayers Open
Twisted transition metal dichalcogenide (TMD) bilayers have garnered significant attention due to the emergence of unconventional quantum phenomena, such as sliding ferroelectricity in multidomain TMD bilayers with domain walls (DWs). Thus…
View article: Tuning electronic transport properties of in-plane-graphene–h-BN superlattices for improved thermoelectric material
Tuning electronic transport properties of in-plane-graphene–h-BN superlattices for improved thermoelectric material Open
In-plane graphene–h-BN (h-BN–G) superlattices have been identified as promising thermoelectric (TE) materials owing to their significantly reduced lattice thermal conductivity compared to that of pristine graphene. To further tune the TE r…
View article: Modulating theElectrocatalytic Activity of IntermetallicCompounds for the Hydrogen Evolution Reaction via Elastic Strain Engineering
Modulating theElectrocatalytic Activity of IntermetallicCompounds for the Hydrogen Evolution Reaction via Elastic Strain Engineering Open
Intermetallic alloys present a promising and cost-effective alternative to Pt-group metals for the hydrogen evolution reaction (HER), addressing the challenges of high cost and limited availability. In this study, the effect of elastic str…
View article: Light-induced photomechanical patterning of ferroelectric polarization
Light-induced photomechanical patterning of ferroelectric polarization Open
Tailoring at will polar textures in ferroelectrics is critical for the development of nanoscale electronics and functional oxide technologies. Freestanding ferroelectric membranes have enabled studies of strain-induced polarization respons…
View article: Light-induced photomechanical patterning of ferroelectric polarization
Light-induced photomechanical patterning of ferroelectric polarization Open
Tailoring at will polar textures in ferroelectrics is critical for the development of nanoscale electronics and functional oxide technologies. Freestanding ferroelectric membranes have enabled studies of strain-induced polarization respons…
View article: Giant Polar Displacements via Strain Relaxation in Itinerant Ferromagnet SrRuO <sub>3</sub> Freestanding Films
Giant Polar Displacements via Strain Relaxation in Itinerant Ferromagnet SrRuO <sub>3</sub> Freestanding Films Open
Polar displacements are conventionally seen as incompatible with metallicity due to charge screening. However, in perovskite oxide heterostructures, cation off‐centring distortions can be achieved through interface engineering strategies—s…
View article: Straintronic and spintronic properties of MnO₂/SiC Van der Waals heterostructure: a DFT study
Straintronic and spintronic properties of MnO₂/SiC Van der Waals heterostructure: a DFT study Open
Strain engineering of 2D heterostructures is pivotal for next-generation flexible electronics. Here, we investigate the straintronic and spintronic properties of MnO₂/SiC van der Waals heterostructures (vdWHs) using density functional theo…
View article: Probing Ge-InducedStrain and Emission in Rutile Sn<sub>1–<i>x</i></sub>Ge<sub><i>x</i></sub>O<sub>2</sub> Nanocrystals
Probing Ge-InducedStrain and Emission in Rutile Sn<sub>1–<i>x</i></sub>Ge<sub><i>x</i></sub>O<sub>2</sub> Nanocrystals Open
Rutile-phase GeO2 and its alloys, such as SnxGe1–xO2, are promising semiconductors due to their ultrawide-bandgaps (4.4–4.7 eV), high carrier mobilities, ambipolar dopability, and e…
View article: FreestandingOxide-Based UV Photodetectors with MechanicallyTunable Performance
FreestandingOxide-Based UV Photodetectors with MechanicallyTunable Performance Open
Ultraviolet (UV) detectors based on Schottky junctions offer advantages such as high detectivity, low noise, and suppressed dark current. Enhancing the Schottky barrier height (SBH) is critical for reducing the dark current and boosting th…
View article: Atomic-scale strain-confined ferroelectricity in fluorite hafnium dioxide
Atomic-scale strain-confined ferroelectricity in fluorite hafnium dioxide Open
HfO 2 -based ferroelectrics hold exceptional promise for next-generation microelectronics, offering robust ferroelectricity down to the nanoscale while maintaining compatibility with CMOS technology. However, stabilization of th…
View article: First Principles study of Photocatalytic Water Splitting in BO Monolayer: Effect of Strain and Surface Functionalization
First Principles study of Photocatalytic Water Splitting in BO Monolayer: Effect of Strain and Surface Functionalization Open
Light element based two dimensional (2D) materials are promising photocatalysts for hydrogen production via water splitting. Boron oxide (BO) is a recently synthesized 2D monolayer which has yet to be thoroughly explored for its potential …
View article: Molecular Engineering for Enhanced Second-Order Nonlinear Response in Spontaneously-Oriented Evaporated Organic Films
Molecular Engineering for Enhanced Second-Order Nonlinear Response in Spontaneously-Oriented Evaporated Organic Films Open
Materials with large second-order nonlinearities are crucial for next-generation integrated photonics. Spontaneously oriented organic thin films prepared by physical vapor deposition offer a promising poling-free and scalable approach. Thi…
View article: Molecular Engineering for Enhanced Second-Order Nonlinear Response in Spontaneously-Oriented Evaporated Organic Films
Molecular Engineering for Enhanced Second-Order Nonlinear Response in Spontaneously-Oriented Evaporated Organic Films Open
Materials with large second-order nonlinearities are crucial for next-generation integrated photonics. Spontaneously oriented organic thin films prepared by physical vapor deposition offer a promising poling-free and scalable approach. Thi…
View article: First Principles study of Photocatalytic Water Splitting in BO Monolayer: Effect of Strain and Surface Functionalization
First Principles study of Photocatalytic Water Splitting in BO Monolayer: Effect of Strain and Surface Functionalization Open
Light element based two dimensional (2D) materials are promising photocatalysts for hydrogen production via water splitting. Boron oxide (BO) is a recently synthesized 2D monolayer which has yet to be thoroughly explored for its potential …
View article: Erratum: “Continuously tunable uniaxial strain engineering of two-dimensional materials under scanning probe microscopy” [Appl. Phys. Lett. <b>127</b> , 093503 (2025)]
Erratum: “Continuously tunable uniaxial strain engineering of two-dimensional materials under scanning probe microscopy” [Appl. Phys. Lett. <b>127</b> , 093503 (2025)] Open