Correlated double sampling
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A Differential Electrochemical Readout ASIC With Heterogeneous Integration of Bio-Nano Sensors for Amperometric Sensing Open
A monolithic biosensing platform is presented for miniaturized amperometric electrochemical sensing in CMOS. The system consists of a fully integrated current readout circuit for differential current measurement as well as on-die sensors d…
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Low-Power CMOS Vision Sensor for Gaussian Pyramid Extraction Open
This paper introduces a CMOS vision sensor chip in a standard 0.18 μm CMOS technology for Gaussian pyramid extraction. The Gaussian pyramid provides computer vision algorithms with scale invariance, which permits having the same response r…
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Design of an Always-On Image Sensor Using an Analog Lightweight Convolutional Neural Network Open
This paper presents an always-on Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) using an analog convolutional neural network for image classification in mobile applications. To reduce the power consumption as well as the…
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CMOS Image Sensor Random Telegraph Noise Time Constant Extraction From Correlated To Uncorrelated Double Sampling Open
A new method for on-chip random telegraph noise (RTN) characteristic time constant extraction using the double sampling circuit in an 8.3 Mpixel CMOS image sensor is described. The dependence of the measured RTN on the time difference betw…
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A $64\times64$ SPAD Array for Portable Colorimetric Sensing, Fluorescence and X-Ray Imaging Open
We present the design and application of a 64x64 pixel SPAD array to portable colorimetric sensing, and fluorescence and x-ray imaging. The device was fabricated on an unmodified 180 nm CMOS process and is based on a square p+/n active jun…
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Low Power CMOS-Based Hall Sensor with Simple Structure Using Double-Sampling Delta-Sigma ADC Open
A CMOS (Complementary metal-oxide-semiconductor) Hall sensor with low power consumption and simple structure is introduced. The tiny magnetic signal from Hall device could be detected by a high-resolution delta-sigma ADC in presence of off…
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Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors Open
This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology…
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Reduction of Common Mode Noise and Global Multivalued Offset in Touch Screen Systems by Correlated Double Sampling Open
Touch-based interactivity has become an important function in displays. This paper reports on the signal processing of touch signals in which touch interactivity is processed as an image, and correlated double sampling (CDS) algorithm is a…
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Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method Open
A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper. A noise decomposition scheme is used to pinpoint the…
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Experimental Verification of the Impact of Analog CMS on CIS Readout Noise Open
In this article, the impact of the combination of the column-level gain and the correlated multiple sampling (CMS) on the noise of CMOS image sensor (CIS) readout chains is first analyzed. The theory is then validated experimentally with C…
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Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling Open
A single-photon CMOS image sensor (CIS) design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple t…
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A High-Performance 2.5 μm Charge Domain Global Shutter Pixel and Near Infrared Enhancement with Light Pipe Technology Open
We developed a new 2.5 μm global shutter (GS) pixel using a 65 nm process with an advanced light pipe (LP) structure. This is the world’s smallest charge domain GS pixel reported so far. This new developed pixel platform is a key enabler f…
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Research on High-Resolution Miniaturized MEMS Accelerometer Interface ASIC Open
High-precision microelectromechanical system (MEMS) accelerometers have wide application in the military and civil fields. The closed-loop microaccelerometer interface circuit with switched capacitor topology has a high signal-to-noise rat…
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A Low-Power Digital Capacitive MEMS Microphone Based on a Triple-Sampling Delta-Sigma ADC With Embedded Gain Open
A triple-sampling ADC can replace the programmable gain amplifier commonly used in the readout circuit for a digital capacitive MEMS microphone. The input voltage can then be multiplied by subtracting a further half-period delayed differen…
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A Low-Noise Instrumentation Amplifier With Built-in Anti-Aliasing for Hall Sensors Open
We present a compact, versatile Hall readout system with digital output, fully integrated in 180 nm technology. The core of the system is an instrumentation amplifier architecture that provides inherent anti-aliasing filtering, where the a…
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Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification Open
This paper presents an in-situ storage topology for ultra-high-speed burst mode imagers, enabling low noise operation while keeping a high frame depth. The proposed pixel architecture contains a 4T pinned photodiode, a correlated double sa…
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A 460 800 Pixels CMOS Capacitive Sensor Array With Programmable Fusion Pixels and Noise Canceling for Life Science Applications Open
Capacitive sensor array (CSA) plays an important role in life science applications, such as cell monitoring, DNA detection, or drug screening. This paper presents a 480×960 time-sharing TDC (ts-TDC) architecture of global shutter CSA. It p…
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A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel Open
A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle. The pixel com…
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Improved Correlated Multiple Sampling by Using Interleaved Pixel Source Follower for High-Resolution and High-Framerate CMOS Image Sensor Open
This article describes an improvement in the noise reduction performance of a column correlated multiple sampling (CMS) readout circuit using interleaved pixel source follower for high-resolution and high-framerate CMOS image sensors (CISs…
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A 0.5e<sub>rms</sub><sup>−</sup>Temporal Noise CMOS Image Sensor With Gm-Cell-Based Pixel and Period-Controlled Variable Conversion Gain Open
A deep subelectron temporal noise CMOS image sensor (CIS) with a Gm-cell based pixel and a correlated-double charge-domain sampling technique has been developed for photon-starved imaging applications. With the proposed technique, the CIS,…
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AGIPD: a multi megapixel, multi megahertz X-ray camera for the European XFEL Open
AGIPD is a hybrid pixel detector developed by DESY, PSI, and the Universities of Bonn and Hamburg. It is targeted for use at the European XFEL, a source with unique properties: a train of up to 2700 pulses is repeated at 10 Hz rate. The pu…
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High-Power-Efficiency Readout Circuit Employing Average Capacitance-to-Voltage Converter for Micro-Electro-Mechanical System Capacitive Accelerometers Open
A capacitance-to-voltage converter (CVC) is proposed in this paper and applied to a readout circuit for a micro-electro-mechanical system (MEMS) accelerometer to improve the power efficiency. In a traditional readout circuit, the front-end…
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An Area-Efficient up/down Double-Sampling Circuit for a LOFIC CMOS Image Sensor Open
A lateral overflow integration capacitor (LOFIC) complementary metal oxide semiconductor (CMOS) image sensor can realize high-dynamic-range (HDR) imaging with combination of a low-conversion-gain (LCG) signal for large maximum signal elect…
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14‐Bit Fully Differential SAR ADC with PGA Used in Readout Circuit of CMOS Image Sensor Open
This paper proposes a 14‐bit fully differential Successive Approximation Register (SAR) Analog‐to‐Digital Converter (ADC) with a programmable gain amplifier (PGA) used in the readout circuit of CMOS image sensor (CIS). SAR ADC adopts two‐s…
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A Reconfigurable Readout Integrated Circuit for Heterogeneous Display-Based Multi-Sensor Systems Open
This paper presents a reconfigurable multi-sensor interface and its readout integrated circuit (ROIC) for display-based multi-sensor systems, which builds up multi-sensor functions by utilizing touch screen panels. In addition to inherent …
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Development of a High Performance 1280×1024 InGaAs SWIR FPA Detector at Room Temperature Open
A 1280 × 1,024 In 0.53 Ga 0.47 As short wave infrared (SWIR) focal plane array (FPA) detector with a planar-type back-illuminated process has been fabricated. With indium bump flip-chip bonding techniques, the InGaAs photodiode arrays were…
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A Highly Linear CMOS Image Sensor Design Based on an Adaptive Nonlinear Ramp Generator and Fully Differential Pipeline Sampling Quantization with a Double Auto-Zeroing Technique Open
For a complementary metal-oxide-semiconductor image sensor with highly linear, low noise and high frame rate, the nonlinear correction and frame rate improvement techniques are becoming very important. The in-pixel source follower transist…
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A closed-loop Sigma-Delta modulator for a tunneling magneto-resistance sensor Open
In this paper, a high-order Sigma-Delta (ΣΔ) modulator in a standard 0.5 µm CMOS technology for a tunneling magneto-resistance sensor (TMR) is presented. The digital output is attained by the interface circuit based on a low-noise chopper …
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Low-Noise Multimodal Reconfigurable Sensor Readout Circuit for Voltage/Current/Resistive/Capacitive Microsensors Open
This paper presents a low-noise reconfigurable sensor readout circuit with a multimodal sensing chain for voltage/current/resistive/capacitive microsensors such that it can interface with a voltage, current, resistive, or capacitive micros…
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Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II Open
The LCLS-II Free Electron Laser (FEL) will produce X-ray pulses with a repetition rate of up to 1 MHz and energies between 250 eV and 5 keV. Experiments conducted at LCLS-II will require 2D imaging detectors with a unique set of features, …