Schottky diode ≈ Schottky diode
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Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier Open
The Schottky barrier for carrier injection into 2D semiconductors can be effectively tuned by using 2D metals.
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Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes Open
Two-dimensional (2D) metal carbides and nitrides, called MXenes, have attracted great interest for applications such as energy storage. We demonstrate their potential as Schottky-barrier-free metal contacts to 2D semiconductors, providing …
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Interfacial engineering of Bi2S3/Ti3C2Tx MXene based on work function for rapid photo-excited bacteria-killing Open
In view of increasing drug resistance, ecofriendly photoelectrical materials are promising alternatives to antibiotics. Here we design an interfacial Schottky junction of Bi 2 S 3 /Ti 3 C 2 T x resulting from the contact potential differen…
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Multilayered PdSe<sub>2</sub>/Perovskite Schottky Junction for Fast, Self‐Powered, Polarization‐Sensitive, Broadband Photodetectors, and Image Sensor Application Open
Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self‐powered photodetector is developed with broadba…
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Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2 Open
Schottky effect of two-dimensional materials is important for nanoscale electrics. A ReSe2 flake is transferred to be suspended between an Au sink and an Au nanofilm. This device is initially designed to measure the transport properties of…
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Interface-mediated hygroelectric generator with an output voltage approaching 1.5 volts Open
Hygroelectricity is proposed as a means to produce electric power from air by absorbing gaseous or vaporous water molecules, which are ubiquitous in the atmosphere. Here, using a synergy between a hygroscopic bulk graphene oxide with a het…
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Self‐Powered Nanoscale Photodetectors Open
Novel self‐powered nanoscale photodetectors that can work without an external power source, which have great application potential in next‐generation nanodevices that operate wirelessly and independently, are being widely studied. This rev…
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On-Chip Integrated, Silicon–Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain Open
We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetecto…
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Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review Open
Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and na…
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Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects Open
Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. …
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Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain Open
Almost-off transistors Wearable devices and environmental sensors ideally should consume very little power to avoid the need for batteries that would have to be replaced. Lee and Nathan developed a thin-film transistor (TFT) from In-Ga-Zn-…
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Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier Open
Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnellin…
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Ultrahigh-performance transparent conductive films of carbon-welded isolated single-wall carbon nanotubes Open
A single-wall carbon nanotube network with welded tube-tube junctions shows excellent transparent conductive performance.
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Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs Open
We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN gate devices and device simulations. We find that,…
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Conductive and Stable Magnesium Oxide Electron‐Selective Contacts for Efficient Silicon Solar Cells Open
A high Schottky barrier (>0.65 eV) for electrons is typically found on lightly doped n‐type crystalline (c‐Si) wafers for a variety of contact metals. This behavior is commonly attributed to the Fermi‐level pinning effect and has hindered …
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Defect Dominated Charge Transport and Fermi Level Pinning in MoS<sub>2</sub>/Metal Contacts Open
Understanding the electronic contact between molybdenum disulfide (MoS2) and metal electrodes is vital for the realization of future MoS2-based electronic devices. Natural MoS2 has the drawback of a high density of both metal and sulfur de…
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Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides Open
Understanding the electron transport through transition-metal dichalcogenide (TMDC)-based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-)electronic devices. Despite the bonding in TMDCs being largely…
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Response of 4H-SiC Detectors to Ionizing Particles Open
We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to alpha and gamma radiation. We studied detectors of three different active area sizes (1 × 1, 2 × 2 and 3 × 3 mm2), while all detectors had t…
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Asymmetric Schottky Contacts in Bilayer MoS<sub>2</sub> Field Effect Transistors Open
The high‐bias electrical characteristics of back‐gated field‐effect transistors with chemical vapor deposition synthesized bilayer MoS 2 channel and Ti Schottky contacts are discussed. It is found that oxidized Ti contacts on MoS 2 form re…
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Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions Open
The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal…
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β-Ga2O3 material properties, growth technologies, and devices: a review Open
Rapid progress in β -gallium oxide ( β -Ga 2 O 3 ) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β -G…
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Directing Charge Transfer in a Chemical‐Bonded BaTiO<sub>3</sub>@ReS<sub>2</sub> Schottky Heterojunction for Piezoelectric Enhanced Photocatalysis Open
The piezo‐assisted photocatalysis system, which can utilize solar energy and mechanical energy simulteneously, is promising but still challenging in the environmental remediation field. In this work, a novel metal–semiconductor BaTiO 3 @Re…
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Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers Open
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devic…
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Enhanced Piezo‐Photoelectric Catalysis with Oriented Carrier Migration in Asymmetric Au−ZnO Nanorod Array Open
Current photocatalytic semiconductors often have low catalytic performance due to limited light utilization and fast charge carrier recombination. Formation of Schottky junction between semiconductors and plasmonic metals can broaden the l…
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Ohmic Contact Engineering for Two-Dimensional Materials Open
One of the major areas of semiconductor device research is the development of transparent or ohmic contacts between semiconductors and metal electrodes for the efficient injection of charge carriers into the conduction channel. Fast-emergi…
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Role of self-trapped holes in the photoconductive gain of <i>β</i>-gallium oxide Schottky diodes Open
Solar-blind photodetection and photoconductive gain >50 corresponding to a responsivity >8 A/W were observed for β-Ga2O3 Schottky photodiodes. The origin of photoconductive gain was investigated. Current-voltage characteristics of the diod…
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Schottky barrier diode based on <i>β</i>-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics Open
The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-…
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Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes Open
Platinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybr…
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High-k Oxide Field-Plated Vertical (001) β-Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm<sup>2</sup> Open
This paper presents vertical (001) oriented $\\beta$-Ga$_2$O$_3$ field plated\n(FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric\nfield oxide. A thin drift layer of 1.7 $\\mu m$ was used to enable a\npunch-thro…
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Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device Open
We demonstrate tunable Schottky barrier height and record photo-responsivity\nin a new-concept device made of a single-layer CVD graphene transferred onto a\nmatrix of nanotips patterned on n-type Si wafer. The original layout, where\nnano…