Growth-Driven Polymorphism Engineering and Direct Phase Modulation of α- and β′-In2Se3 Article Swipe
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· 2025
· Open Access
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· DOI: https://doi.org/10.21203/rs.3.rs-7385740/v1
Two-dimensional (2D) In2Se3 represents a uniquely versatile platform for novel electronics, hosting the rare coexistence of paraelectric (β), antiferroelectric (β'), and ferroelectric (α) phases. However, synthesizing phase-pure In2Se3 films, particularly the critical ferroelectric semiconducting α-phase, is fundamentally hindered by the subtle structural distinctions and minimal energetic differences among its polymorphs. Here, we directly reveal phase-selective growth of In2Se3 on mica using cross-sectional transmission electron microscopy (TEM). It is found that both chemical vapor deposition (CVD) and physical vapor deposition (PVD) techniques yield exclusively either the pure β′ phase or coexisting monolayer α and β′ phases, with the cooling rate playing a critical role in phase selection. Crucially, in situ stress release within the epitaxial film on mica generates wrinkles propagating along the <> direction, triggering an immediate β' to α phase transformation. The resulting phase-pure α-In2Se3 films enable ferroelectric transistors exhibiting a high electron mobility of 259 cm2 V-1 s-1. This precise control over polymorph synthesis unlocks promising opportunities for 2D ferroelectric devices and nanoelectronics, offering a pathway to harness phase-specific functionalities.
Related Topics To Compare & Contrast
- Type
- preprint
- Language
- en
- Landing Page
- https://doi.org/10.21203/rs.3.rs-7385740/v1
- https://www.researchsquare.com/article/rs-7385740/latest.pdf
- OA Status
- gold
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4413795797