Radiation hardness study using SiPMs with single-cell readout Article Swipe

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O. Bychkova , P. Parygin , E. Garutti , Werner Kaminsky , S. Martens , E. Popova , J. Schwandt , A. Stifutkin ·

YOU? · · 2022 · Open Access · · DOI: https://doi.org/10.1016/j.nima.2022.166533

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to Φ = 5e13 cm−2. The cell has a pitch of 15μm. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of Voff by ≈0.5 V is observed after Φ = 5e13 cm−2.

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Type: article
Language: en
Landing Page: https://doi.org/10.1016/j.nima.2022.166533
OA Status: hybrid
Cited By: 4
References: 14
Related Works: 10
OpenAlex ID: https://openalex.org/W3208618042

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