Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development Article Swipe

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Bastien Beltrando , Marco A. Villena , Ashwani Kumar , Shruba Gangopadhyay , Deepak Kamalanathan , E. Smith , N. Kazem , Ghazal Saheli , Stephen Weeks , Michael Haverty , M. Kaliappan , Andrea Padovani , S. Krishnan , J. Anthis , L. Larcher , Milan Pešić ·

YOU? · · 2024 · Open Access · · DOI: https://doi.org/10.1109/imw59701.2024.10536919

In this paper we present a bottom-up device development methodology leveraging multiscale material-device modeling for the development of novel analog electronic synapses. We used multiscale materials-device physics simulations to screen material and process combinations as well as engineer (and Si-validate) synaptic device performance through predictive modeling, enabling assessment of process integration tolerances.

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Process (computing) Computer science Multiscale modeling Synapse Development (topology) Quantum tunnelling Materials science Nanotechnology Optoelectronics Neuroscience Computational chemistry Chemistry Mathematical analysis Biology Mathematics Operating system

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Type: article
Language: en
Landing Page: https://doi.org/10.1109/imw59701.2024.10536919
OA Status: green
Cited By: 1
References: 4
Related Works: 10
OpenAlex ID: https://openalex.org/W4398784224

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