Gallium Arsenide
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Description
Gallium arsenide ( GaAs ) is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
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- Slug: gallium-arsenide
- Total Views: 108
- Added: Jul 20, 2024